In this review we present the analysis and design of submicrometer MOSFETs for high performance. In particular we describe the very many second-order effects that occur or are further amplified in submicrometer MOSFETs. Then the scaling rules are examined, which make it possible to improve the speed and density of integration, fundamental requirements in the context of ULSI but which must be verified when a reduction of the MOS size. Particular attention is dedicated to the methods used to reduce the hot electron effects and, at last, we describe a submicrometer MOSFET, in which all the technological solutions adopted to improve the operating conditions of the device are highlighted.
ANALYSIS AND DESIGN OF SUBMICROMETER MOSFETs FOR HIGH PERFORMANCE: A REVIEW / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - ELETTRONICO. - 16:5(2023), pp. 446-454.
ANALYSIS AND DESIGN OF SUBMICROMETER MOSFETs FOR HIGH PERFORMANCE: A REVIEW
Roberto MARANIInvestigation
;Anna Gina PERRI
Conceptualization
2023-01-01
Abstract
In this review we present the analysis and design of submicrometer MOSFETs for high performance. In particular we describe the very many second-order effects that occur or are further amplified in submicrometer MOSFETs. Then the scaling rules are examined, which make it possible to improve the speed and density of integration, fundamental requirements in the context of ULSI but which must be verified when a reduction of the MOS size. Particular attention is dedicated to the methods used to reduce the hot electron effects and, at last, we describe a submicrometer MOSFET, in which all the technological solutions adopted to improve the operating conditions of the device are highlighted.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
