In this paper, after a description of the techniques used to realize heterostructures, we present a comparative analysis of the properties of materials used, in order to identify those that best adapt to the different fields of application. At last we present, as an example, a simulation study of a TFET (Tunneling Field Effect Transistor) inverter, whose performances are compared with those of a typical MOS inverter.
COMPARATIVE ANALYSIS OF MATERIAL PROPERTIES FOR HETEROSTRUCTURES / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - ELETTRONICO. - 16:6(2023), pp. 518-527.
COMPARATIVE ANALYSIS OF MATERIAL PROPERTIES FOR HETEROSTRUCTURES
Roberto MaraniSoftware
;Anna Gina Perri
Conceptualization
2023-01-01
Abstract
In this paper, after a description of the techniques used to realize heterostructures, we present a comparative analysis of the properties of materials used, in order to identify those that best adapt to the different fields of application. At last we present, as an example, a simulation study of a TFET (Tunneling Field Effect Transistor) inverter, whose performances are compared with those of a typical MOS inverter.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
