In this paper we present a simple model of Carbon Nanotube Field Effect Transistors (CNTFETs), whose main objective is to obtain a very good agreement between measured and simulated I-V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model online available.
|Titolo:||A Simple I-V Model of Carbon Nanotube Field Effect Transistors|
|Data di pubblicazione:||2013|
|Appare nelle tipologie:||1.1 Articolo in rivista|