In this paper, a very accurate model of optical modulators in silicon-on-insulator technology is developed and validated using experimental results reported in literature. Using an optimized nanometer MOS structure, a significant bandwidth increase (around 45%), length decrease (around four times), and power consumption reduction (three times) with respect to the state-of-the-art have been obtained
Scaling and optimization of MOS optical modulators in nanometer SOI waveguides / Passaro, Vittorio; Dell'Olio, Francesco. - In: IEEE TRANSACTIONS ON NANOTECHNOLOGY. - ISSN 1536-125X. - 7:4(2008), pp. 401-408. [10.1109/TNANO.2008.920207]
Scaling and optimization of MOS optical modulators in nanometer SOI waveguides
PASSARO, Vittorio;Dell'Olio, Francesco
2008-01-01
Abstract
In this paper, a very accurate model of optical modulators in silicon-on-insulator technology is developed and validated using experimental results reported in literature. Using an optimized nanometer MOS structure, a significant bandwidth increase (around 45%), length decrease (around four times), and power consumption reduction (three times) with respect to the state-of-the-art have been obtainedFile in questo prodotto:
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