In this paper a new semiempirical large signal thermal model of GaAs MESFETs is proposed for DC characterization. The model includes a third order dependence of fitting parameters on bias conditions and three thermal fitting parameters. A number of GaAs MESFETs, each very different from a geometrical and technological point of view, have been characterized as a function of temperature and modelled with high accuracy. The CPU extraction time results are moderate in any example. Results have been compared with the Rodriguez-Tellez model, showing improvements in accuracy of better than 30%. The model can be successfully used in MMIC CAD applications
DC Thermal Modelling of GaAs MESFETs based on a semiempirical approach / Giorgio, Agostino; Passaro, Vittorio; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ELECTRONICS. - ISSN 0020-7217. - 88:8(2001), pp. 861-871. [10.1080/00207210110063548]
DC Thermal Modelling of GaAs MESFETs based on a semiempirical approach
GIORGIO, Agostino;PASSARO, Vittorio;PERRI, Anna Gina
2001-01-01
Abstract
In this paper a new semiempirical large signal thermal model of GaAs MESFETs is proposed for DC characterization. The model includes a third order dependence of fitting parameters on bias conditions and three thermal fitting parameters. A number of GaAs MESFETs, each very different from a geometrical and technological point of view, have been characterized as a function of temperature and modelled with high accuracy. The CPU extraction time results are moderate in any example. Results have been compared with the Rodriguez-Tellez model, showing improvements in accuracy of better than 30%. The model can be successfully used in MMIC CAD applicationsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
