In this paper a modified, simple and accurate explicit expression of dc I-V characteristics of GaAs MESFETs is presented. The model proposed here allows to obtain the best fit with measured I-V device characteristics, especially in the knee region in which other models are less accurate. Comparison with other dc models of MESFETs indicates the new model as the most accurate one. The model can be easily implemented in programs of computer-aided nonlinear analysis and design of circuits with GaAs MESFETs

An improved DC model of GaAs MESFETs for computer-aided circuit design

Castagnolo, Beniamino;Giorgio, Agostino;Perri, Anna Gina
1995

Abstract

In this paper a modified, simple and accurate explicit expression of dc I-V characteristics of GaAs MESFETs is presented. The model proposed here allows to obtain the best fit with measured I-V device characteristics, especially in the knee region in which other models are less accurate. Comparison with other dc models of MESFETs indicates the new model as the most accurate one. The model can be easily implemented in programs of computer-aided nonlinear analysis and design of circuits with GaAs MESFETs
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11589/4345
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