In this paper a modified, simple and accurate explicit expression of dc I-V characteristics of GaAs MESFETs is presented. The model proposed here allows to obtain the best fit with measured I-V device characteristics, especially in the knee region in which other models are less accurate. Comparison with other dc models of MESFETs indicates the new model as the most accurate one. The model can be easily implemented in programs of computer-aided nonlinear analysis and design of circuits with GaAs MESFETs
An improved DC model of GaAs MESFETs for computer-aided circuit design / Castagnolo, Beniamino; Giorgio, Agostino; Perri, Anna Gina. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - STAMPA. - 7:3(1995), pp. 55-57.
An improved DC model of GaAs MESFETs for computer-aided circuit design
Castagnolo, Beniamino;Giorgio, Agostino;Perri, Anna Gina
1995-01-01
Abstract
In this paper a modified, simple and accurate explicit expression of dc I-V characteristics of GaAs MESFETs is presented. The model proposed here allows to obtain the best fit with measured I-V device characteristics, especially in the knee region in which other models are less accurate. Comparison with other dc models of MESFETs indicates the new model as the most accurate one. The model can be easily implemented in programs of computer-aided nonlinear analysis and design of circuits with GaAs MESFETsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
