Cavity solitons are similar to spatial solitons. appearing as localized bright (lots ill the transverse intensity profile of the electromagnetic field. but they arise in dissipative systems. In this paper we consider a broad-area vertical-cavity semiconductor microresonator, driven by ail external coherent field, at room temperature. The active material is constituted by a Multiple Quantum Well GaAs/AlGaAs structure (MQW). We present a set of nonlinear dynamical equations for the electric field and the carrier density valid for both a passive and ail active (i.e. with population inversion) configuration. The complex nonlinear susceptibility is derived oil the basis of a full many-body theory, with the Coulomb enhancement treated ill the Pade approximation. The linear stability analysis of the homogeneous steady states is performed with a generalised approach, and numerical simulations demonstrating the existence of spatial patterns and cavity solitons ill experimentally achievable parameter regions are given for the two Configurations.
|Titolo:||First Principle Theory for Cavity Solitons in Semiconductor Microresonators|
|Data di pubblicazione:||2001|
|Digital Object Identifier (DOI):||10.1007/s100530170174|
|Appare nelle tipologie:||1.1 Articolo in rivista|