In this paper a 2-D I-V MESFET model coupled with a 3D thermal model is presented. The temperature dependence of the velocity-electric field expression proposed by Chang et al. has been considered so as to evaluate the device characteristics and small-signal parameters at the actual channel temperature. The effect of the device self-heating has been included by a coupled electrothermal simulation. The thermal dependence of all physical parameters involved both in the electric model and in the thermal model has been taken into account.
|Titolo:||Analytical investigation of the temperature dependence of GaAs FET equivalent circuit parameters|
|Data di pubblicazione:||2001|
|Appare nelle tipologie:||1.1 Articolo in rivista|