The aim of this paper is to characterize and tomodel the behavior of Carbon NanoTube Field Effect Transistors (CNTFETs) operating in sub-threshold region for low power applications. In particular we refer to Schottky Barrier (SB) CNTFETs, because these devices have a better performance when they operate in sub-threshold region. In this way it is possible to evaluate the noise margin and output voltage swing, necessary to digital circuits design.
Analysis of CNTFETs Operating in SubThreshold Region for Low Power Digital Applications / Marani, Roberto; Perri, Anna Gina. - In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. - ISSN 2162-8769. - STAMPA. - 5:2(2016), pp. 1-4. [10.1149/2.0151602jss]
Analysis of CNTFETs Operating in SubThreshold Region for Low Power Digital Applications
MARANI, ROBERTOSoftware
;PERRI, Anna Gina
Methodology
2016-01-01
Abstract
The aim of this paper is to characterize and tomodel the behavior of Carbon NanoTube Field Effect Transistors (CNTFETs) operating in sub-threshold region for low power applications. In particular we refer to Schottky Barrier (SB) CNTFETs, because these devices have a better performance when they operate in sub-threshold region. In this way it is possible to evaluate the noise margin and output voltage swing, necessary to digital circuits design.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
