In this paper, a new semiempirical DC thermal model of low- and high-power GaAs MESFETs is proposed. The model takes into account the effect of device negative output conductance and simulates external thermal effects modelling the dependence on temperature of the device threshold voltage and the maximum saturation drain-source current. A number of GaAs MESFETs, very different from a geometrical and technological point of view, have been characterized as a function of temperature and modelled by our model with high accuracy. The CPU extraction time results are moderate in any example. Results have been compared with the Rodriguez-Tellez model, showing improvements of accuracy better than 30 per cent. The model can be successfully used n MMIC CAD applications
Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures / Giorgio, A.; Perri, A. G.. - In: INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. - ISSN 0894-3370. - STAMPA. - 14:1(2001), pp. 1-14. [10.1002/1099-1204(200101/02)14:1<1::AID-JNM392>3.0.CO;2-2]
Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures
Giorgio, A.;Perri, A. G.
2001-01-01
Abstract
In this paper, a new semiempirical DC thermal model of low- and high-power GaAs MESFETs is proposed. The model takes into account the effect of device negative output conductance and simulates external thermal effects modelling the dependence on temperature of the device threshold voltage and the maximum saturation drain-source current. A number of GaAs MESFETs, very different from a geometrical and technological point of view, have been characterized as a function of temperature and modelled by our model with high accuracy. The CPU extraction time results are moderate in any example. Results have been compared with the Rodriguez-Tellez model, showing improvements of accuracy better than 30 per cent. The model can be successfully used n MMIC CAD applicationsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
