A temperature dependent DC model of GaAs MESFETs is proposed. Modelling the dependence on temperature of the device threshold voltage and of the maximum saturation drain-source current allows to characterize GaAs MESFETs having long and short gate length with results, compared with the Rodriguez-Tellez model, showing improvements of accuracy up to 60%.
A temperature dependent DC model of GaAs MESFETs for MMIC CAD applications / Giorgio, Agostino; Perri, Anna Gina. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - STAMPA. - 13:2(2001), pp. 70-73.
A temperature dependent DC model of GaAs MESFETs for MMIC CAD applications
Giorgio, Agostino;Perri, Anna Gina
2001-01-01
Abstract
A temperature dependent DC model of GaAs MESFETs is proposed. Modelling the dependence on temperature of the device threshold voltage and of the maximum saturation drain-source current allows to characterize GaAs MESFETs having long and short gate length with results, compared with the Rodriguez-Tellez model, showing improvements of accuracy up to 60%.File in questo prodotto:
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