A DC Thermal Model of Carbon Nanotube Field Effect Transistors for CAD Applications

In this paper a DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. In particular we improve the semi-empirical model, already proposed by us, considering the temperature variation in the Landauer formula for the drain-source current. To confirm the validity of the proposed thermal model, the simulations are performed in different thermal conditions, obtaining I-V characteristics perfectly coincident with those of the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), but with a run time lower. This result makes the proposed model particularly suitable to be implemented in CAD applications.