In this paper a DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. In particular we improve the semi-empirical model, already proposed by us, considering the temperature variation in the Landauer formula for the drain-source current. To confirm the validity of the proposed thermal model, the simulations are performed in different thermal conditions, obtaining I-V characteristics perfectly coincident with those of the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), but with a run time lower. This result makes the proposed model particularly suitable to be implemented in CAD applications.

A DC Thermal Model of Carbon Nanotube Field Effect Transistors for CAD Applications / Marani, Roberto; Perri, Anna Gina. - In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. - ISSN 2162-8769. - 5:8(2016), pp. M3001-M3004. [10.1149/2.0011608jss]

A DC Thermal Model of Carbon Nanotube Field Effect Transistors for CAD Applications

MARANI, ROBERTO;PERRI, Anna Gina
2016-01-01

Abstract

In this paper a DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. In particular we improve the semi-empirical model, already proposed by us, considering the temperature variation in the Landauer formula for the drain-source current. To confirm the validity of the proposed thermal model, the simulations are performed in different thermal conditions, obtaining I-V characteristics perfectly coincident with those of the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), but with a run time lower. This result makes the proposed model particularly suitable to be implemented in CAD applications.
2016
A DC Thermal Model of Carbon Nanotube Field Effect Transistors for CAD Applications / Marani, Roberto; Perri, Anna Gina. - In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. - ISSN 2162-8769. - 5:8(2016), pp. M3001-M3004. [10.1149/2.0011608jss]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/61011
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