The aim of this paper is to simulate electro-thermal effects in Heterojunction Bipolar Transistors (HBTs) based on Si/SiGe and on AlGaAs/GaAs, by means of an analytical electro-thermal model, already proposed by us, able to calculate the temperature and current distribution for any integrated device, whose structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal source
Simulation of Electro-Thermal Effects in HBTs based on Si/SiGe and AlGaAs/GaAs / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - 9:3(2016), pp. 268-277.
Simulation of Electro-Thermal Effects in HBTs based on Si/SiGe and AlGaAs/GaAs
MARANI, ROBERTO;PERRI, Anna Gina
2016-01-01
Abstract
The aim of this paper is to simulate electro-thermal effects in Heterojunction Bipolar Transistors (HBTs) based on Si/SiGe and on AlGaAs/GaAs, by means of an analytical electro-thermal model, already proposed by us, able to calculate the temperature and current distribution for any integrated device, whose structure can be represented as an arbitrary number of superimposed layers with a 2-D embedded thermal sourceI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
