In this paper the state of art of semiconductors devices for Industrial Pulse-Width Modulation (PWM) Inverters is presented. The last generations of Insulated Gate Bipolar Transistors (IGBTs), Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) Transistors are introduced and analysed. At last a comparison between Si-based IGBT and SiC MOSFET, obtained by SPICE simulations, is presented in order to identify the device which makes the PWM inverter more efficient.
Power Semiconductors Devices for Industrial PWM Inverters: State of Art / Marani, Roberto; Perri, Anna Gina. - In: INTERNATIONAL JOURNAL OF ADVANCES IN ENGINEERING AND TECHNOLOGY. - ISSN 2231-1963. - 10:1(2017), pp. 52-65.
Power Semiconductors Devices for Industrial PWM Inverters: State of Art
MARANI, ROBERTO;PERRI, Anna Gina
2017-01-01
Abstract
In this paper the state of art of semiconductors devices for Industrial Pulse-Width Modulation (PWM) Inverters is presented. The last generations of Insulated Gate Bipolar Transistors (IGBTs), Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) Transistors are introduced and analysed. At last a comparison between Si-based IGBT and SiC MOSFET, obtained by SPICE simulations, is presented in order to identify the device which makes the PWM inverter more efficient.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
