The realistic modeling of spin-transfer torque (STT)-magnetoresistive random access memory (MRAM) for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments requires a full description of stochastic switching processes in the state-of-the-art STT-MRAMs. Here, we compare micromagnetic simulations with an analytical formulation that takes into account the spin-torque asymmetry of the spin-polarization function by considering the mean, standard deviation, skewness, and kurtosis. We find that, while the first and second statistical moments exhibit a very similar behavior, skewness and kurtosis are substantially different and must be taken into account in order to provide an accurate prediction of the switching performance. In fact, a reasonable fit of the probability density function (PDF) of the switching time is given by a Pearson Type IV PDF. The main achievements of this paper underline the need of data-driven design of STT-MRAM that uses a full micromagnetic simulation framework for the statistical proprieties PDF of switching processes.

Description of Statistical Switching in Perpendicular STT-MRAM Within an Analytical and Numerical Micromagnetic Framework / Siracusano, G; Tomasello, R; D’Aquino, M; Puliafito, V; Giordano, A; Azzerboni, B; Braganca, P; Finocchio, G; Carpentieri, M. - In: IEEE TRANSACTIONS ON MAGNETICS. - ISSN 0018-9464. - STAMPA. - 54:5(2018). [10.1109/TMAG.2018.2799856]

Description of Statistical Switching in Perpendicular STT-MRAM Within an Analytical and Numerical Micromagnetic Framework

Tomasello R;Puliafito V;Carpentieri M
2018-01-01

Abstract

The realistic modeling of spin-transfer torque (STT)-magnetoresistive random access memory (MRAM) for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments requires a full description of stochastic switching processes in the state-of-the-art STT-MRAMs. Here, we compare micromagnetic simulations with an analytical formulation that takes into account the spin-torque asymmetry of the spin-polarization function by considering the mean, standard deviation, skewness, and kurtosis. We find that, while the first and second statistical moments exhibit a very similar behavior, skewness and kurtosis are substantially different and must be taken into account in order to provide an accurate prediction of the switching performance. In fact, a reasonable fit of the probability density function (PDF) of the switching time is given by a Pearson Type IV PDF. The main achievements of this paper underline the need of data-driven design of STT-MRAM that uses a full micromagnetic simulation framework for the statistical proprieties PDF of switching processes.
2018
Description of Statistical Switching in Perpendicular STT-MRAM Within an Analytical and Numerical Micromagnetic Framework / Siracusano, G; Tomasello, R; D’Aquino, M; Puliafito, V; Giordano, A; Azzerboni, B; Braganca, P; Finocchio, G; Carpentieri, M. - In: IEEE TRANSACTIONS ON MAGNETICS. - ISSN 0018-9464. - STAMPA. - 54:5(2018). [10.1109/TMAG.2018.2799856]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11589/122010
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