The paper introduces the issue of the typical defects present in PV-cell. Typical defects are introduced for two different technologies of photovoltaic devices: the multicrystal Silicon and the amorphous Silicon one. The defects have been implemented on a tridimensional model of a well operating cell implemented in Comsol Multiphysics environment. The aim of the pape r is to simulate the behaviour of possible defect as they are pointed out by means of thermography. Defects have been modelled as they are described in literature and implemented into the model of photovoltaic cells. A multiphysical analysis, needed to study the effects of the defects on the cell behaviour, has been conducted using utilities available in Comsol environment.
|Titolo:||Defects in poly-Silicon and amorphous Silicon solar cells|
|Data di pubblicazione:||2010|
|Digital Object Identifier (DOI):||10.24084/repqj08.632|
|Appare nelle tipologie:||1.1 Articolo in rivista|