The objective of this work is to present a control technique for power converters capable of slowing down the electrical ageing phenomena affecting the winding insulation of high-speed electrical machines. Such machines are profitably used in aeronautical or electric vehicle applications since they allow a drastic reduction of encumbrance and weight. Obviously, these machines require high-frequency supply voltage and hence converters based on wide band gap devices are the most suitable. Notwithstanding, issues related to high-frequency operation of SiC or GaN MOSFETs are continuously arising, such as the increased electrical stress of the winding insulation due to more severe over-voltages at the motor terminals. These downsides represent a major concern for some applications where system reliability is of the utmost importance like in the aeronautical or automotive fields. This paper provides a detailed description of the proposed control technique and shows the relevant advantages through simulation and experimental results.
Active Ageing Control of Winding Insulation in High Frequency Electric Drives / Leuzzi, Riccardo; Monopoli, Vito Giuseppe; Cupertino, Francesco; Zanchetta, Pericle. - ELETTRONICO. - (2018), pp. 8558257.6852-8558257.6858. (Intervento presentato al convegno 10th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2018 tenutosi a Portland, OR nel September 23-27, 2018) [10.1109/ECCE.2018.8558257].
Active Ageing Control of Winding Insulation in High Frequency Electric Drives
Leuzzi, Riccardo;Monopoli, Vito Giuseppe;Cupertino, Francesco;
2018-01-01
Abstract
The objective of this work is to present a control technique for power converters capable of slowing down the electrical ageing phenomena affecting the winding insulation of high-speed electrical machines. Such machines are profitably used in aeronautical or electric vehicle applications since they allow a drastic reduction of encumbrance and weight. Obviously, these machines require high-frequency supply voltage and hence converters based on wide band gap devices are the most suitable. Notwithstanding, issues related to high-frequency operation of SiC or GaN MOSFETs are continuously arising, such as the increased electrical stress of the winding insulation due to more severe over-voltages at the motor terminals. These downsides represent a major concern for some applications where system reliability is of the utmost importance like in the aeronautical or automotive fields. This paper provides a detailed description of the proposed control technique and shows the relevant advantages through simulation and experimental results.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.