Perpendicular MgO-based magnetic tunnel junctions are optimal candidates as building blocks of spin-transfer torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below 106 A/cm(2). A recent work has experimentally demonstrated the possibility of performing magnetization switching assisted by an electric-field at ultralow current density. Theoretically, this switching has been studied using a macrospin approach only. Here, we show a full micromagnetic study. We found that the switching occurs via a complex nucleation process including the nucleation of magnetic vortexes.
|Titolo:||Micromagnetic study of electrical-field-assisted magnetization switching in MTJ devices|
|Data di pubblicazione:||2014|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1109/TMAG.2014.2327192|
|Appare nelle tipologie:||1.1 Articolo in rivista|