The paper introduces the issue of the typical defects in photovoltaic (PV) cells and focuses the attention on three specific defects: linear edge shunt, hole, and conductive intrusion. These defects are modeled by means of finite-element method and implemented in Comsol Multiphysics environment to analyze the temperature distribution in the whole defected PV cell. All the three typologies of silicon-based PV cells are considered: monocrystalline, polycrystalline, and amorphous. Numerical issues (simulation times, degrees of freedom, mesh elements, and grid dependence analysis) are reported.
A Finite-Element Approach to Analyze the Thermal Effect of Defects on Silicon-Based PV Cells / Vergura, Silvano; Acciani, Giuseppe; O., Falcone. - In: IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS. - ISSN 0278-0046. - 59:10(2012), pp. 3860-3867. [10.1109/TIE.2011.2163286]
A Finite-Element Approach to Analyze the Thermal Effect of Defects on Silicon-Based PV Cells
VERGURA, Silvano;ACCIANI, Giuseppe;
2012-01-01
Abstract
The paper introduces the issue of the typical defects in photovoltaic (PV) cells and focuses the attention on three specific defects: linear edge shunt, hole, and conductive intrusion. These defects are modeled by means of finite-element method and implemented in Comsol Multiphysics environment to analyze the temperature distribution in the whole defected PV cell. All the three typologies of silicon-based PV cells are considered: monocrystalline, polycrystalline, and amorphous. Numerical issues (simulation times, degrees of freedom, mesh elements, and grid dependence analysis) are reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
