Description of statistical switching in perpendicular STT-MRAM within a numerical micromagnetic framework

The magnetization switching driven by spin-transfer torque (STT) and Spin Hall effect (SHE) is the fundamental dynamics to design magnetic memories and spin-logic devices. Particularly, STT-driven magnetization switching is at the basis of emerging storage technologies (i.e. STT-MRAM), which are very attractive for their performances in terms of energy losses, scalability and integration with complementary metal-oxide semiconductor (CMOS) process and technology. Considering the obvious technological interest in the physics of magnetic switching, the development of an accurate model to describe the switching processes of STT-MRAM is an open issue. In this work, the stochastic switching in a perpendicular magnetic tunnel junction (MTJ) has been studied by means of a full micromagnetic model and an analytical formulation